to ? 126 1. emitter 2. collector 3. base to-126 plastic-encapsulate transistors 2sd2136 transistor (npn) features z high forward current transfer ratio h fe which has satisfactory linearity. z low collector-emitter saturation voltage v ce(sat) z allowing supply with the radial taping maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo * i c =30ma,i b =0 60 v emitter-base breakdown voltage v (br)ebo i e = 100a,i c =0 6 v collector cut-off current i cbo v cb =60v,i e =0 200 a collector cut-off current i ceo v ce =60v,i b =0 300 a emitter cut-off current i ebo v eb =6v,i c =0 1 ma h fe(1) * v ce =4v, i c =1a 40 250 dc current gain h fe(2) * v ce =4v, i c =3a 10 collector-emitter saturation voltage v ce(sat) * i c =3a,i b =0.375a 1.2 v base-emitter voltage v be * v ce =4v, i c =3a 1.8 v transition frequency f t v ce =5v,i c =0.1a, f=10mhz 30 mhz *pulse test: pulse width 300 s, duty cycle 2.0%. classification of h fe(1) rank p q r range 40-90 70-150 120-250 symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 6 v i c collector current 3 a p c collector power dissipation 1.25 w r ja thermal resistance from junction to ambient 100 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,dec,2013
1 10 100 1000 200 400 600 800 1000 1200 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1 10 100 1000 10 100 1000 0 200 400 600 800 1000 0.1 1 10 100 1000 012345 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 10 100 1000 1 10 100 1000 =8 i c v besat ?? base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 p c ?? t a ambient temperature t a ( ) collector power dissipation p c (w) 2sd2136 i c h fe ?? t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = 4v 3000 collector current i c (ma) base-emmiter voltage v be (mv) i c ?? v be t a = 2 5 t a = 100 common emitter v ce =4v static characteristic common emitter t a =25 collector current i c (a) collector-emitter voltage v ce (v) 0.4 3000 3000 3000 =8 t a = 1 0 0 t a =2 5 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector current i c (ma) 10ma 9ma 8ma 7ma 6ma 5ma 2ma 3ma 4ma i b =1ma 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,dec,2013
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